| 摘要 |
PURPOSE:To improve reliability, and to fine a semiconductor device by plating platinum layers with metals, using opening sections in polyimide group resin films as masks and forming bumps and utilizing metallic films for wirings as electrodes at the time of the plating of the bumps in a large number of photolithography processes. CONSTITUTION:A platinum layer 7 is shaped onto the surface including an opening section 6 in a polyimide group resin film through a sputtering method. A photo-resist film 5 and the platinum layer 7 on the photo-resist film 5 are removed through a lift-off method, a gold layer is deposited on the platinum layer 7 through an electroplating method, employing an aluminum layer 3 as an electrode for plating, and a bump 8 is formed. A resin film 4 is gotten rid of through anisotropic dry etching, using the bump 8 as a mask, and the aluminum film 3 is etched selectively and a wiring electrically connected to the bump 8 is shaped. An silicon oxide film 9 for protecting the surface is formed through a CVD method. Accordingly, processes are simplified, and the accuracy of patterning is improved and fining can be enhanced.
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