Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns

摘要

A method of providing an optoelectronic device is disclosed in which the spatial gain profile within the device is tailored by a predetermined pattern of injecting and noninjecting contacts over the surface of the device with variation in the fractional surface coverage per unit area of injecting to noninjecting contact, thereby providing nearly arbitrary two-dimensional spatial gain profile within the optoelectronic device. A tailored gain broad area semiconductor laser fabricated by this method is capable of high power operation with very narrow, single lobed farfield patterns.