| 摘要 |
<p>PURPOSE:To make it possible to form a compact configuration, by providing a light amplifying function part, which amplifies light so that self-oscillation does not occur, between two reflecting parts. CONSTITUTION:An active layer 3 comprising InGaAsP is laminated on an N-InP substrate 4 in a structure similar to that of a semiconductor laser. A P-InP substrate 2 is further laminated on the layer 3. Thereafter, etching and crystal growing are performed so that the active layer 3 becomes a rectangular light guide. Finally a P electrode 1 and an N electrode 5 are formed. Then cleavage is performed. As reflecting end surfaces, cleaved surfaces 6 and 6-2 are utilized. An injected current is swept with respect to incident light 7. Then, an output is changed. The output change corresponds to the spectrum of the incident light.</p> |
