| 摘要 |
PURPOSE:To attain high sensitivity without deteriorating the noise margin by connecting a drain electrode and a source electrode among a P-channel junction FET between a gate electrode being a control electrode of a thyristor element and a cathode being a cathode electrode. CONSTITUTION:A drain electrode of a P-channel junction FET 11 is connected to a gate electrode of a thyristor controlling power, a source electrode of the FET 11 and a cathode electrode of the thyristor Th are connected, an anode electrode of a diode D is connected to a gate electrode of the FET 11 and a cathode electrode of the diode D is connected to the drain electrode of the FET 11. Then the gate circuits of the thyristor Th and the FET 11 are used the gate control route in common and a resistance RGK is obtained between the gate and cathode of the thyristor Th by means of the diode D. Then malfunction is prevented (increasing noise margin).
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