| 摘要 |
PURPOSE:To improve the performance of various Si devices, an LSI, etc., by forming a compound semiconductor film, a lattice constant of which coincides with that of Si for an Si substrate, onto the Si substrate. CONSTITUTION:In a semiconductor device using Si as a substrate, a compound semiconductor film 5, a lattice constant of which agrees with that of Si for the Si substrate, is shaped onto the Si substrate 1. The lattice constant of the compound semiconductor film 5 hetero-epitaxial grown directly onto the Si substrate 1 or onto a single crystal metallic thin-film or an insulating thin-film on the Si substrate 1 can be conformed completely with that of Si in two dimensions. Accordingly, the semiconductor film having high quality can be deposited on Si, the high-quality Si layer not misfitted can be hetero-epitaxially grown onto the single-crystal semiconductor film, and multilayer films at an atomic layer level can be grown.
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