发明名称 SEMICONDUCTOR ELEMENT DEVICE
摘要 PURPOSE:To enable the phototransmissivity to active element circuit regions to be decreased by a method wherein two or more color films fitted to respective photodiodes corresponding to red, green and blue are laminated on a part requiring no filter on the active element circuit regions subjected to erroneous operations by photoincidence to compose a photoresisting film as a dark-colored film. CONSTITUTION:Photodiodes 2 are provided inside a silicon substrate 1 while an insulating layer 3 is provided to cover the diodes 2. Furthermore, metallic films 4 are formed on the insulating film 3 to cover active element circuit regions 6 while a passivation film 5 is laminated to cover the metallic films 4 and the insulating layer 3. Color filters 7 are composed of 7a-7c respectively corresponding to R.G.B. The color filters 7 are single layered on respective photodiodes 2 but three color filters 7a-7c are laminated to form a photoresisting film 7x above the active element circuit regions 6. In other words, the photoresisting film 7x is darkened by laminating the multiple color filters 7a-7c. Through these procedures, the phototransmissivity to the active element circuit regions 6 can be decreased.
申请公布号 JPS63304675(A) 申请公布日期 1988.12.12
申请号 JP19870140203 申请日期 1987.06.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIMAMOTO HARUO;TERAOKA YASUHIRO
分类号 H01L31/10 主分类号 H01L31/10
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