| 摘要 |
PURPOSE:To make it possible to measure the potential wave form of a desired wiring by an electron probe without the influence of local electric field effect due to neighboring wirings, by forming, on a lower layer wiring pattern, an upper layer wiring with a rectangular pattern or a pattern equivalent to it, and keeping the neighboring upper layer wiring at the ground potential or a potential equivalent to it. CONSTITUTION:On lower layer wirings 3-5, upper layer wirings 8-10 with rectangular patterns or patterns equivalent to them are formed. Among them, the upper layer wirings 9, 10 on the lower layer wirings 3, 5 are kept at the same value with the ground potential. When the upper wiring 8 of this semiconductor integrated circuit is irradiated with an electron beam by a well-known diagnosis equipment applying an electronic probe, the potential change of the lower wiring 4 appears on the upper layer wiring 8, by the effect of capacitive coupling. Thereby, the potential change of the lower wiring 4 can be measured without influence of local electric field effect caused by the potential change of the lower wirings 3, 5.
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