| 摘要 |
PURPOSE:To obtain an epitaxial layer of good crystal properties by providing a solution bath having a solution which allows the melting or liquid phase epitaxy of a substrate, and performing an etching or liquid phase epitaxial growth before and after the vapor phase epitaxial growth, thereby enabling the defects of the interface and the interface level to be easily reduced. CONSTITUTION:In a furnace core tube 3 for growth of an organic metal vapor phase epitaxy (MOVPE) method, an InP substrate 1 is placed on a susceptor 2 made of carbon. Before the growth, it is heated by a high-frequency coil 4 to the growth temperature, e.g., 650 deg.C while a H2 gas or a mixed gas of PH3-H2 for preventing the elimination of P of the substrate 1 is made to flow. When the temperature of In 5 and the temperature of the susceptor 2 including the substrate 1 have stabilized, a slider 8 is moved, and by this movement a partitioning plate 7 drops into a groove 9 for the partitioning, whereby the solution of the In 5 flows into a liquid bath 10 passing over the substrate 1. the substrate 1 is melted back by about-2mum by being brought into contact with the In 5, and thereafter the supply of the raw material gas is continuously begun to apply a vapor phase epitaxy to the surface. With this, an epitaxial growth layer of a reduced defect density and interface level can stably and simply be formed.
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