| 摘要 |
PURPOSE:To contrive accomplishment of a high-speed operation in a large current by a method wherein a one-conductive type second buried layer, which is formed directly below the third region on the first buried layer located in the second island and also brought in contact with the third region, is provided. CONSTITUTION:The second buried layer 3, having the same conductive type as the first base region 6a, is formed on the first buried layer 2 located directly below the first base region 6a of a reverse-operation NPN transistor in an I<2>L (integrated injection logic circuit) part. Accordingly, the second buried layer 3 also becomes a part of the base region, and effective epitaxial thickness becomes zero. As a result, the storage of the hole in the epitaxial layer directly below the first base region 6a is reduced remarkably, and the working speed, especially in large current, can be improved.
|
