| 摘要 |
PURPOSE:To enable the impurity doping of a specific amount with excellent reproducibility, by measuring the ion amount in gas plasma with a probe having a negative potential, and monitoring the amount of doping to a silicon substrate. CONSTITUTION:A plasma doping equipment is provided with a probe 7a to collect positive ion, an insulating tube 7b to protect the probe 7a, and a DC power source 8 to apply a negative potential to the probe 7a. When the DC power source 8 is applied to the probe 7a is plasma, correlation between the saturation ion current collected by the probe 7a having a negative potential and the impurity concentration doped on the silicon substrate 6 surface is taken. Thereby, the impurity doping of a specific amount is enabled with excellent reproducibility, while the in-process impurity doping concentration is monitored.
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