| 摘要 |
PURPOSE:To easily form an optional pattern by forming the pattern by etching after forming a transparent conductive film then annealing it. CONSTITUTION:Etching is performed prior to annealing. After a transparent conductive film using indium oxide In2O3 alone or In2O3 and tin oxide SnO2 as a main constituent and containing fluorine is formed, a pattern is formed by etching, then annealing is applied. The etching speed when a thin film using In2O3 or In2O3/SnO2 as a main constituent is formed is remarkably increased, and the immersion time in the etching liquid required for etching the transparent conductive film with the same thickness can be sharply shortened.
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