| 摘要 |
PURPOSE:To disperse stress applied between a semiconductor substrate and a base member, and to reduce cracks formed to the semiconductor substrate by dividing a metallized layer shaped onto a main surface on the side oppositely faced to the base member in the semiconductor substrate into sections and forming the metallized layers. CONSTITUTION:In a semiconductor device with a semiconductor substrate 1, a base member 3 on which the semiconductor substrate 1 is placed, a metallized layer 12 shaped onto a main surface on the side oppositely faced to the base member 3 in the semiconductor substrate 1, and a bonding member 4 bonding the metallized layer 12 and the base member 3, said metallized layer 12 is divided into sections and formed. The metallized layers 12 are divided into sections and shaped onto the rear of the semiconductor substrate 1 such as a semiconductor chip 1, and the metallized layers 12 and the base member 3 such as a die pad 3 are bonded through the bonding member 4 such as a solder material. Accordingly, stress 5 applied between the semiconductor chip 1 and the die pad 3 is dispersed, thus preventing the formation of cracks in the semiconductor chip 1.
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