| 摘要 |
PURPOSE:To develop the titled Al alloy which is effective for the prevention of electromigration and hillock by adding specific amounts of B and Ca independently or compositely to the Si contg. Al alloy as the semiconductor wiring material. CONSTITUTION:The Al alloy contg. 0.5-1.5wt.% Si and contg. either or both 0.001-0.5wt.% B and Ca independently or compositely is used as the Al alloy utilized for connection wiring of each electrode of a semiconductor device. By this method, the semiconductor device in which the cutting of distributing wires and short-circuit accidents by the formation of electromigration and hillock are not generated can be obtd.
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