| 摘要 |
PURPOSE:To reduce the whole area of a semiconductor element, and to increase the degree of integration and working speed by forming all of emitter, base and collector electrodes for a transistor shaped to a mesa type section in a semiconductor base body onto the side face and top face of the mesa type section. CONSTITUTION:A semiconductor base body 10 with a mesa type section having side faces and a top face rising at a certain angle to the main surface of the mesa type section, a field insulating film 1 shaped so as to be extended onto the main surface of the semiconductor base body 10 adjacent to the mesa type section, and emitter, base and collector regions 28, 26, 11 formed into the mesa type section are shaped. Two electrodes 24B, 24C, which are brought into contact with the side faces of the mesa type section, mutually insulated electrically and formed onto the field insulating film 21 while being respectively connected electrically to two regions in the emitter, base and collector regions 28, 26, 11, and one electrode 35 shaped brought into contact with the top face of the mesa type section and electrically connected to residual one region in the emitter, base and collector regions 28, 26, 11 are formed.
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