| 摘要 |
PURPOSE:To keep a specified plasma state at all times, and to prevent an adverse effect on a semiconductor wafer of disturbance, etc., by mounting a detecting section detecting beams in specific wavelength of plasma in a reaction chamber at all times and a control section controlling an etching parameter by a detecting output from the detecting section. CONSTITUTION:Upper and lower each electrode 2, 3 is respectively arranged oppositely into a reaction chamber 1, and an object to be etched 11 on the lower electrode 3 is etched and treated by plasma acquired by applying a high- frequency output between each electrode 2, 3 while introducing an etching gas. Detecting sections 9, 10 detecting beams in specific wavelength of plasma in the reaction chamber 1 at all times and a control section 12 controlling an etching parameter by detecting outputs from the detecting sections 9, 10 are set up to such a dry etching device, and a plasma state is maintained at an expected value during etching treatment. Plasma wavelength is monitored by the control section 12, and feedback control is conducted to a high-frequency oscillator 4, a gas flow controller 5 and a pressure controller 7 so that displacement from an optimum waveform is corrected.
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