| 摘要 |
PURPOSE:To maintain high breakdown voltage properties while obtaining the title transistor having stable electrical characteristics by connecting first and second unit field-effect transistors, in which the phase relationship of drains and sources to gates is reversed mutually, in parallel. CONSTITUTION:A pair or more of unit transistor pairs 13 consisting of the combination of first and second unit field-effect transistors 11, 12 in which at least ones of drains D and sources S are formed by introducing an impurity into a semiconductor substrate 5 several times by using many kind of masks and the positional relationship of the drains D and the sources S to gates G is reversed mutually are mounted. Each gate G1, G2, each drain D1, D2 and each source S1, S2 in said first and second unit field-effect transistors 11, 12 are respectively connected electrically, thus connecting the first and second unit field-effect transistors 11, 12 in parallel. Accordingly, an effect due to the positional displacement of the internal structure of active regions is offset automatically, thus acquiring a field-effect transistor having stable electrical characteristics.
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