发明名称 PROCESSING EQUIPMENT BY HIGH FREQUENCY PLASMA
摘要 PURPOSE:To perform efficient and uniform plasma processing of samples stored in a reaction vessel by forming the reflecting surface of a reflecting means so that the high frequency wave is scattered and radiated uniformly in the gas in a reaction vessel after it was reflected. CONSTITUTION:High frequency wave is radiated from a high frequency oscillator 15 through a radiator 18 toward a reflecting means 13 arranged above the reaction vessel 12 wherein a sample setting stand 11 is provided. The density of energy of the high frequency wave 14 reflected by this reflecting means 13 is scattered and distributed uniformly over a wide range to the width of a sample 19 to radiate the gas in the reaction vessel 12. Plasma is formed by this radiation to perform uniform plasma processing to the sample 19 on the sample setting stand 11.
申请公布号 JPS63302938(A) 申请公布日期 1988.12.09
申请号 JP19870139555 申请日期 1987.06.03
申请人 DENKI KOGYO KK 发明人 NAKAMURA KOTARO
分类号 B01J19/08;C23C16/50;C23C16/511;H01L21/302;H01L21/3065;H01L21/31 主分类号 B01J19/08
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