| 摘要 |
PURPOSE:To maintain high breakdown voltage properties while obtaining a field-effect transistor having stable electrical characteristics by alternately connecting three or more of active regions rectilinearly arranged onto a semiconductor substrate on every other active region to form drains and sources and mutually connecting conductive layers interposed among the active regions to shape gates. CONSTITUTION:At least ones of drains D and sources S are formed by introducing an impurity into a semiconductor substrate 5 several times by using a plural kind of masks. Three or more of active regions 8 shaped disposed onto the semiconductor substrate 5 rectilinearly are connected alternately on every other active region to form the drains D and the sources S while a plurality of conductive layers 9 in MIS structure respectively interposed among said active regions 8 are connected mutually to shape gates G, thus constituting a field-effect transistor 10. Accordingly, an effect due to the positional displacement of the internal structure of the active regions forming the drains and the sources is offset automatically, thus acquiring the field-effect transistor having stable electrical characteristics while maintaining high breakdown voltage properties.
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