| 摘要 |
PURPOSE:To effectively form a Schottky electrode formed in its shape by forming a certain first insulating film on a heat resistant conductive film, and forming a second insulating film thereon. CONSTITUTION:A semiconductor substrate 11 made of GaAs is covered with a conductive film 12 made of tungsten silicide of a high melting pint conductive material to form a Schottky junction with the GaAs. Then, it is covered with a first insulating film 12 made of a silicon oxide film, and formed in a predetermined shape. Then, after it is heat treated at a high temperature, it is covered with a second insulating film 14 made of silicon nitride, and its surface is flattened by a photoresist film 15. Thereafter, the whole surfaces of the films 14, 15 are gradually etched, and the etching is finished during the period from when the surface of the film 13 is exposed to when the surface of the film 12 is exposed. Then, when it is etched with diluted fluoric acid, the surface of the film 12 is exposed. Subsequently, a low resistance metal film 15 made or noble metal, such as Au is covered in contact with the film 12, and shaped to form a low resistance gate (Schottky electrode).
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