发明名称 SEMICONDUCTOR DEVICE MANUFACTURE EQUIPMENT
摘要 PURPOSE:To reduce turbulence of a gas flow, make the film thickness constant and improve quality, by supporting wafers with two projection parts and one engaging part. CONSTITUTION:A susceptor 4 is disk-shaped in a plan and two tilting parts 5 are provided facing exactly opposite to each other on its rear. The projection parts 31 and 32 are saliently provided on the tilting parts 5 of the susceptor 4. The engaging part 6 is provided continuously with the tilting parts 5, being shaped to be projected about the same length as the thickness of the wafers 2 from the surfaces of the tilting parts 5. The plain surfaces of the wafers 2 about on the tilting parts 5, while their circumfencial edge parts are supported by the projection parts 31, 32 and the engaging part 6. Since the susceptor 4 is provided with the tilting parts 5, the wafers 2 receive the force in the arrow directions B1 and B2 round the projection parts 31 and 32 as the centers in their circumfencial end parts due to their own weight and especially, the circumfencial end parts near the engaging parts 6 are engaged with the engaging part 6, they are surely supported solely by the engaging part 6 even without the projection parts. Gas flows and discharge is performed in this state and the susceptor 4 is turned in the arrow C direction so as to perform the film formation on the wafers 2.
申请公布号 JPS63300513(A) 申请公布日期 1988.12.07
申请号 JP19870136764 申请日期 1987.05.29
申请人 FUJITSU LTD 发明人 MIENO FUMITAKE;NAKAZAWA TSUTOMU;ESHITA TAKASHI;FURUMURA YUJI
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
代理机构 代理人
主权项
地址