| 摘要 |
<p>A process for improving the quality of semiconductor materials by minimizing carbon content of these materials is described. The process comprises treating carbonaceous surfaces of a reactor system which come into contact with a hydrogen environment at temperatures of greater than about 500 DEG C. during preparation of the semiconductor materials with silicon carbide, prior to the preparation of the semiconductor materials. Also, described is a semiconductor material of lowered carbon content which is produced by this process.</p> |
