Surface treatment method and apparatus.

摘要

The surface of a sample, specifically that of a semiconductor device, is treated with an active species beam that contains active species having a translational energy in a range of 0.01 - 100 eV. The method comprises the first step of mixing a gas of activated first species with a gas of second species, differing in mass from said first species, thus causing species to collide in order to form a beam of said second gas active species with higher translational energy.