| 摘要 |
A plurality of silicon pressure transducers 10 are formed by processing two conductive silicon wafers 11, 14, one of the wafers including a layer of borosilicate glass 32, a thin portion of which 17 is on the surface 12 of one of the plates of a capacitor formed by field-assisted bonding together of the two wafers, the thin layer of borosilicate glass avoiding arcing during the field-assisted bonding process. |
