| 摘要 |
PURPOSE:To form a plurality of single-element type resistance elements having arbitrary resistance values and temperature coefficients in a fine region on a semiconductor substrate by forming a desired resistance element of one kind of semiconductor element, and arbitrarily controlling electric characteristics of the semiconductor element. CONSTITUTION:A silicon dioxide 2 is formed by thermally oxidizing on a silicon substrate 1. Then, a polycrystalline silicon 3 is deposited by a vacuum chemical vapor growth method. Thereafter, silicon ions are implanted into a desired region of the silicon. The diameters of the crystal grains of regions A, B can be altered by varying the doses of the regions A, B at this time. When a focused ion beam implantation technique (FIB) is used for the ion implantation method, the silicon can be implanted into an extrafine region. Subsequently, the silicon is formed in a desired shape to form a surface protecting silicon dioxide 4 and aluminum electrodes 5, thereby completing a resistance element. |
