| 摘要 |
PURPOSE:To shorten a semiconductor manufacturing process by a method wherein through holes of multilayer interconnection are formed by etching an inorganic insulating film by making use of a photosensitive polyimide as a mask and the polyimide used as the mask is used as an interlayer insulating film as it is. CONSTITUTION:An SiO2 oxide film 12, polysilicon 13 and a first-layer metal wiring part 14 are formed on an Si semiconductor substrate 11; furthermore, an inorganic insulating film 15 is formed. Then, a photosensitive polyimide film 16 is formed on this inorganic insulating film 15. While a beam of light 17 is irradiated by an ordinary photolithographic method by using a mask, an exposure operation is executed. A wafer which has been patterned by a developing operation is heat-treated at a temperature condition of 350-500 deg.C. By this treatment, the photosensitive polyimide 16 is thermally contracted; pattern edge parts 19 of one part 18a of a through hole is rounded. If the inorganic insulating film 15 is etched by making use of the photosensitive polyimide 16 as the mask, the part 18a of the through hole is formed as the through hole 18. Then, a second-layer metal wiring part 20 is evaporated; a two-layer wiring part is formed by a photolithographic operation and an etching operation.
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