| 摘要 |
PURPOSE:To enable a semiconductor substrate to be manufactured on the industrial base by a method wherein, in the doping process, a layer containing specific dopant is provided on the surface of a semiconductor and then the layer is irradiated with a plasma downward to permeate the semiconductor with the dopant simultaneously controlling the amount of the dopant. CONSTITUTION:A source layer 2 is provided on a semiconductor substrate 1 such as an Si substrate etc., and then the semiconductor is permeated with a dopant by exposing the source layer 2 to plasma to provide a diffused layer 4. At this time, assuming the impurity concentration in the source layer 2 to be constant, the thinner the film thickness of the source layer 2, the more the led-in amount and the higher the concentration in the diffused layer 4. Besides, assuming the impurity concentration in the source layer 2 to be constant, despite the thicker the layer thickness, the more the total amount of dopant undoubtedly, the diffused layer 4 becomes a low concentration layer. At this time, judging from the fact that the concentration of gas component is recognized to increase in the source layer 2, it is presumable that the energy is given off in the source layer 2 when the source layer 2 is irradiated with plasma and then plasma source is restored from the excited state to the normal state to make the semiconductor substrate 1 permeated with the dopant.
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