| 摘要 |
PURPOSE:To eliminate a working for opening a connection hole in an insulator layer and to form a flat surface on a conductor layer of an upper layer at a connector by conducting the insulator layer by irradiating the layer with an ion beam. CONSTITUTION:An insulator layer 3 is formed on a conductor layer 2 of a lower layer on a substrate 1. Then, a mask film 5 is formed, and an opening is formed. Subsequently, a metal ion beam 6 is irradiated to conduct the insulator film of the opened section of a mask film. Then, after the mask film 5 is removed, a conductor layer 4 of an upper layer is formed. Thus, the layer 2 is electrically connected by the conducted insulator 7 to the layer 4. Thus, the step of working the opening at the insulator layer is eliminated, the step of conducting between the layers is facilitated, and the surface of the conductor layer can be flattened.
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