| 摘要 |
PURPOSE:To prevent damage of high-energy rays by a method wherein an intermediate layer is provided on the lower layer of a resist for pattern formation, and a part of the high-energy is reflected and the rest is absorbed. CONSTITUTION:A resist pattern 14a is formed by X-ray exposure and development. Then, an intermediate layer 13 is dry-etched with the resist pattern 14a as a mask, and an organic layer 13a is left under the resist pattern 14a. Following this, a substrate 11 is etched as desired with the resist pattern 14a and organic layer 13a as masks. Then, the organic layer 13a is etched, and the resist pattern 14a is removed. To etch the intermediate layer 13 and organic layer 13a, gases corresponding to the metal contained in the intermediate layer 13 is used. Since the intermediate layer 13 is an organic layer containing heavy metal or a glass layer containing heavy metal, moat of the X-ray permeating the part other than an absorption pattern 16 of the mask 15 collides with the heavy metal in the intermediate layer 13 and disappears. Thus, the amount of the X-ray intruding into the device region 12 on a silicon substrate 11 decreases, thereby preventing the damage to a semiconductor device. |
