| 摘要 |
PURPOSE:To make it possible to grow a highly pure semiconductor with a clean surface by a method wherein a fixed reaction pipe which isolates atmosphere is prepared, another movable internal pipe is provided on the inside of the pipe, by-products are adhered only on that internal pipe, and the internal pipe is replaced by moving the internal pipe in the state where the internal pipe is completely isolated from the reaction pipe to solve the problem of contamination with by-products and contamination with atmosphere at the time of replacement of the reaction pipe. CONSTITUTION:A gas is flowed inside the internal pipe 6, and a carbon susceptor 4 is heated with a high-frequency coil 2 to decompose the gas so as to allow a semiconductor thin film to grow on a substrate 3. At this time, highly pure hydrogen is flowed between a reaction pipe 1 and the internal pipe 6, with the result that the by-products produced during the growth are accumulated only on the inside of the internal pipe. After the growth, the internal pipe 6, the susceptor 4, and the substrate 3 are moved to a receiver chamber 7 with a magnet rod 13, and a gate valve 14 is closed. After that, the internal pipe 6 is separated from the susceptor 4 with a hydraulic magnet cylinder 8 to move the susceptor and substrate to a substrate replacement chamber 9. On the other hand, the internal pipe 6 is further moved to an internal pipe replacement chamber 11 to be isolated from the susceptor receiver chamber 7 with a gate valve 15. After that, an internal exchange opening 12 is opened to replace it with a new one.
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