| 摘要 |
PURPOSE:To reduce damage exerted on a silicon substrate and to perform etching with good repeatability, by using a mixed gas, which contains specific gases for etching and for piling, so as to etch the silicon. CONSTITUTION:A silicon oxidizing film 2 is formed on a silicon substrate 1, and a lithographic process is used to form an opening part 3. A mixed gas, which contains one species of NF3, SF6 as etching gases and contains one species of CHF3, CH2F2, CH3F, C2H2F2 as piling gases, is used to etch the substrate 1 anisotropically. Trench etching is thus performed to form a vertical groove 4. Accordingly damage exerted on the substrate 1 is reduced and the etching is performed with good repeatability.
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