| 摘要 |
PURPOSE:To suppress the generation of a smear appropriately even in a device composed of many picture elements by a method wherein this device is constituted by the following: an optoelectric transducer part which is formed by a p-n junction on the surface of a semiconductor substrate; a signal readout part which is formed by a thin-film transistor whose source region and drain region are arranged in a direction perpendicular to the substrate via a channel part. CONSTITUTION:A channel part 16 is formed between a source region 14 and a drain region 15. The surface of a conductive layer 12 end a semiconductor thin film is covered with an insulating film 17 of silicon oxide; a drain electrode 19 for readout use is connected to the drain region 15 via a contact hole formed at one part of the insulating film 17. Furthermore, a gate electrode 20 is formed via the insulating film 17 in such a way that it faces the channel part 16 of the semiconductor thin film 13. If a positive bias is impressed on the gate electrode 20, a signal electric charge which has been stored in the source region 14 is read out by the drain electrode 19 via the drain region 15. Even when the strong light is incident on a photodiode and an excess electric charge is generated, this charge is absorbed only by the substrate and does not leak out to the signal readout part. Accordingly, the generation of a smear can be suppressed.
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