发明名称 Power sensor for RF power measurements
摘要 In a power sensor for RF power measurments, comprising a thin-film absorbing resistor formed on the top surface of a support member and a thermocouple which is electrically isolated from the circuit of said absorbing resistor, the absorbing resistor is formed on an insulating film of a silicon support member so as to increase the sensitivity and to facilitate manufacture thereof, the silicon support member including an island formed beneath the absorbing resistor, a thermally conducting portion formed in spaced relationship thereto with a narrow bridge portion provided inbetween, and said thermocouple being constituted by the bridge portion and by mutually spaced contact zones formed thereon.
申请公布号 US4789823(A) 申请公布日期 1988.12.06
申请号 US19880159520 申请日期 1988.02.19
申请人 ROHDE & SCHWARZ GMBH & CO. KG 发明人 DELFS, HANS;BETZ, TILMAN
分类号 G01R21/04;(IPC1-7):G01R21/02;G01R21/00 主分类号 G01R21/04
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