| 摘要 |
PURPOSE:To prevent a W electrode wiring from being peeled upon the succeeding processing of high-temperature treatment, by forming the W electrode wiring, which is large in its line width, on an underlayer pattern when the electrode wirings of bilayer structure is formed of the W electrode wiring and an Al electrode wiring. CONSTITUTION:An n-type impurity layer 3 is formed on an active region of a p-type Si substrate 1, and a BPSG film 4 is formed thereon and it is fluidized by heat treatment. A contact window 5 is opened on the BPSG film 4. After a W silicide film is formed, the contact window 5 is covered with the W silicide film serving as a barrier film 6. Simultaneously an underlayer pattern 7, which is larger in its dimension than an electrode pad, is formed on a region where a W electrode wiring will be formed later large in its line width, for example, on the position for the electrode pad with which a needle contacts upon the measuring of characteristics. Subsequently a W electrode wiring 8 is formed and next a BPSG film 9 is formed. After heat treatment is performed, a contact window 11 is formed on the W electrode wiring 8 and a two-layered electrode wiring 10 is made of Al.
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