发明名称 SEMICONDUCTOR MANUFACTURING DEVICE
摘要 PURPOSE:To enable nondestractive and on-the-spot observation of the flatness and the smoothness of a thin film, and to enable controlling the title device so that the flatness and the smoothness of the thin film are kept constant at all times in a state of normal pressure and reduced pressure by a method wherein an optical system with which electromagnetic waves will be projected, a detection system with which the intensity of reflected waves coming from the thin film will be detected, and a processing system with which the data of said systems will be processed are used. CONSTITUTION:The projected electromagnetic wave is focussed into a pattern size or less, and it is used for detection of end point of the flow of a thin film 2a using the method of scanning by the scanning system 4. The electromagnetic waves emitted by the optical system 3 focussed on the substrate 2 provided in a flow furnace 1 is projected, it is scanned by the scanning system 4, and the intensity of the reflection light is detected by a detection system 5. The obtained data is converted into the degree of flow of the thin film by a processing system 6. If this operation is conducted while a flow process is being performed, the flow end point of the thin film can be detected. Besides, by adding a function with which the atmosphere in the flow furnace 1 will be changed according to the degree of flow, the same flow shape can always be obtained while the total thermal hysteresis is being maintained even when the parameter of composition and the like of the thin film makes a change.
申请公布号 JPS63299226(A) 申请公布日期 1988.12.06
申请号 JP19870133825 申请日期 1987.05.29
申请人 NEC CORP 发明人 GOTO FUMIHIKO
分类号 H01L21/203;H01L21/26;H01L21/66 主分类号 H01L21/203
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