Method for fabricating low loss crystalline silicon waveguides by dielectric implantation

摘要

A method of fabricating low loss silicon optical waveguides by high energy ion implantation which converts a buried region into dielectric material. The top silicon surface can them be etched or formed into waveguides that are isolated by the buried dielectric. Annealing of the top silicon layer can be used to improve optical quality and additional silicon can be added to the top surface waveguides by epitaxial growth.