| 摘要 |
PURPOSE:To perform a test twice as fast as conventionally, by making a second contact area equal to or larger than a first contact area so as to lower current density on the second contact and making an applied voltage half. CONSTITUTION:A contact chain 100 is formed by disposing diffusion layers 30 and Al layer wiring matters on a semiconductor substrate. A pad 1 for flow-in of a stress current and a pad 2 for flow-out of the stress current are disposed on both ends of the contact chain 100, respectively. A size of each contact 11, where the stress current flows from each wiring matter to each diffusion layer 30, is made to be that of an evaluated object, that is, 1.0mum or less. Each contact 10, where the stress current contrarily flows from the diffusion layer 30 to the wiring matter, is made to be e.g., ten times or more as large as the contact 11. A breakdown of junction between the diffusion layer 30 and the substrate below the contact 11 is evaluated by applying the current stress to the pattern of the contacts 10 and 11. Hence this test is performed twice as fast as conventionally.
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