| 摘要 |
PURPOSE:To obtain a Hall device which can generate a large Hall voltage and whose semiconductor thin film is not distorted even when an adhesive agent layer is deformed by a method wherein a magnetic substance layer is formed on the semiconductor thin film of a prescribed pattern or in a prescribed part on a protective film formed on the semiconductor thin film in such a way that it can constitute one part of a magnetic substance for magnetism collection use. CONSTITUTION:If a magnetic substance layer is formed on a semiconductor thin film 3 of a prescribed pattern or in a prescribed part on a protective film 18 formed on the semiconductor thin film by a plating method or a vacuum evaporation method in such a way that it can constitute at least one part of a magnetic substance MA for magnetism collection use, it is possible to obtain a Hall device which can generate a large Hall voltage and whose semiconductor thin film 3 is not distorted even when an adhesive agent layer is deformed because the material MA for magnetism collection use is attached directly onto the semiconductor thin film 3 of the prescribed pattern on a magnetic- substance support substrate MS without using an adhesive agent layer.
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