MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To grow a W film having an excellent adhesion to SiO by a method wherein an SiO2 film is formed on the main surface of a semiconductor substrate and W is grown on the above SiO2 film by CVD under the condition that Hg lamps are irradiated. CONSTITUTION:An SiO2 film 2 is formed, an Si substrate 1 performed a patterning at need is put in an Hg lamp irradiation type CVD unit and a CVD of W is executed using WF6+H2 as source gas under the condition that Hg lamps are irradiated. The peak wavelengths of the Hg lamps 21 are 253 and 104 nm and ones having a power of 0.5-2 kW are used as the Hg lamps. A heating part 30 is constituted of such heaters as halogen lamps and heats wafers 5 at a temperature of 250-700 deg.C. The interior of a chamber 10 is evacuated through discharge tubes 12 and 13 to reduce the pressure in the interior to pressure close to a CVD growth pressure subsequent to the evacuation. It is desirable that the CVD growth pressure is 0.2-2.0 torr. It is desirable that irradiation is continuously irradiated.