| 摘要 |
PURPOSE:To implant ions through an amorphous layer, and prevent the channeling phenomena of ion implantation, by implanting impurity ions in a silicon substrate after the amorphous layer is formed on the silicon substrate surface. CONSTITUTION:After an amorphous layer 5 is formed on an N-type silicon substrate 1 by applying impulse of argon ions (Ar<+>) 4, boron ions (B<+>) 6 are implanted at a low acceleration voltage. Thereby, a shallow P<+> layer 7 can be formed, and the formation of a shallow junction is facilitated. Further, by the sputtering action of argon ions (Ar<+>) 4, an effect is obtained wherein the N-type silicon substrate surface of the part to be ion-implantated is cleaned.
|
