| 摘要 |
PURPOSE:To reduce a through current and to alleviate power consumption by superposing a bias voltage on the back bias of the well of at least one MOS field-effect transistor. CONSTITUTION:When the gate voltage Vg of an input terminal 1 is an earth potential, a MOSFETQ1 is turned ON, while a MOSFETQ2 is turned OFF. When the gate voltage Vg of the terminal 1 is raised from the earth potential toward a voltage Vcc, the Q2 is turned ON at the gate voltage Vthn, and the Q1 is turned OFF at the gate voltage (Vcc-Vthp-DELTAVth). The voltage DELTAVth is the rising value of the threshold voltage of the Q1 due to so-called substrate effect when a bias voltage Va is superposed on the back bias of the N-well of the Q1. A voltage (Vcc+Va) higher than the bias voltage Va from a driving DC voltage Vcc applied to the drain of the Q1 is applied to the back bias of the N-well of the Q1.
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