| 摘要 |
PURPOSE:To obtain a light emitting element in which a light distribution can be confined by disordering even in a wavelength band of 1.1-1.6mum by containing In but not containing P in the component element of a compound semiconductor film. CONSTITUTION:A P-type InP clad layer 2 (1mum thick), an undoped InGaA As/ InGaAs superlattice layer 3 (lnGaA As: 100Angstrom thick, InA As: 100Angstrom thick, each with 5 layers), an N-type InP clad layer 5 (1.5mum thick), and an N-type InGaAs layer 6 (0.5mum thick) are sequentially laminated by an organic metal vapor growing method on a P-type InP substrate 1. Thereafter, Zn is diffused in a region 7 by a selectively diffusing method. The Zn-diffused section 4 of the superlattice layer becomes by disordering lnGaAlAs layer of mean composition. Then, it is covered with an insulating film 8, and an AnGeNi-Au electrode 9 is deposited. Subsequently, a Cr-Au electrode 10 is deposited on the rear face of the substrate, and isolated into chips by cleaving and scribing. When a current flows to the element, carrier is injected to the InGaAs layer of the layer 3 to radiate light. The emitted light wavelength is 1.55mum. |
