| 摘要 |
PURPOSE:To avoid machining damage and to allow the steepness of the longitudinal interface to be controlled at a monoatomic order by a method wherein a trapezoidal super-lattice is grown on a substrata which is machined into a specified shape, and the trapezoidal super-lattice is embedded by the continuous growth. CONSTITUTION:A long stripe-shaped etching mask 5 is arranged on the face (001) of a GaAs substrate in the direction [110] to make a stripe with steps on the substrate 1 in the direction [110] by etching. AlAs 8 is grown on the substrate by an organic metal vapor phase growth method. At this time, the growth conditions are adjusted so that the layer grows into a trapezoid shape on the upper surface of the trapezoid and the width of the upper surface will be less than 100 nanometer. Then, GaAs 3 and AlAs 2 are grown in order. At this time, they do not grow on the side wall of the trapezoid so that, in the case of a trapezoid-shaped or triangular super-lattice-trapezoid-shaped super- lattice, after AlAs is grown on it to be a triangular shape or in the case of triangular super-lattice, the trapezoid-shaped or triangular super-lattice is covered with the growth of AlAs 4. Thus, a quantum thin line is present in the section of GaAs 3 enclosed in the dotted line. |
