| 摘要 |
PURPOSE:To obtain a three-terminal superconducting device which can efficiently control a transition between superconductivity and normal conduction and can be operated at high speed by a method wherein a ceramic superconductor as a high- temperature superconductor is used and a magnetic semiconductor is utilized to control a supercurrent by a proximity effect between a superconductor and a semiconductor and by implantation of a carrier. CONSTITUTION:In a superconducting device a first ceramic superconductor and a second ceramic superconductor 2, 6 (either of an identical kind or of different kinds) as high-temperature superconductors are faced via an insulating film 5. A magnetic semiconductor 1 is installed at least at one of the first ceramic superconductor and the second ceramic superconductor via a barrier insulating part 3 or 10. A first main electrode and a second main electrode 7, 8 are installed at the first ceramic superconductor and the second ceramic superconductor, respectively; a control electrode 9 is installed at the magnetic semiconductor. As the ceramic superconductor, a perovskite-structure oxide containing a rare-earth element is preferable. A Schottky barrier 3 is formed between this oxide superconducting film 2 and the substrate 1 ; a depletion layer 4 is formed on the side of the substrate 1 in a non-bias state; by this setup, the oxide superconducting film is insulated from the substrate; an insulating film 10 may be laid between them separately.
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