| 摘要 |
PURPOSE:To obtain a sharp resist pattern profile in a short time, by controlling the concentration of a developer and the developing speed by the use of temperature and pressure of the developer and the developer itself. CONSTITUTION:EBR-9 is spin-coated as an electron beam resist. The EBR-9 is a resist with which a very excellent resist pattern profile can be obtained by reducing the dosage of electron beam and increasing the developing time. After electron beam exposure of the EBR-9, it is contained in a carrier and placed at a loader side. The carrier is conveyed in a developer tank 21, and a semiconductor substrate is developed with a developer 22. The temperature of the developer 22 is changed, the concentration is kept constant, and the developing speed is always kept constant. Then the carrier is put in a rinsing liquid tank. Thereby, a sharp resist pattern profile can be obtained in a short time. |
