Process for producing silicon carbide whiskers

摘要

A method of manufacturing silicon carbide whiskers in which silicon and carbon containing feedstock is placed on a series of gas permeable supports and passed through a reaction zone. The feedstock is maintained at 1500 DEG C. to 1700 DEG C. between forty to eighty minutes while the off gases from other reacting feedstock is permitted to pass from one support to another. In this manner uniformity of environment is maintained to produce high quality silicon carbide whiskers having average diameters by mass between 1 and 1.5 microns.