| 摘要 |
PURPOSE:To prevent the ion implantation from influencing adjacent cells by a method wherein impurity ions of the second conductivity type which are opposite conductivity type and whose longitudinal extent is larger than that of the first conductivity type are implanted through the same mask opening with the amount of doping less than that of the first conductivity type ions. CONSTITUTION:When the first conductivity type impurity ions are implanted onto a semiconductor substrate 1 through a film with the thickness of less than 0.5mum, the second conductivity type impurity ions which are opposite conductivity type and whose longitudinal extent is larger than that of the first conductivity type ions are implanted through the same opening of a mask 8, with the amount of doping less than that of the first conductivity type ions. Thus, the opposite conductivity type and second conductivity type impurities offset the base of the distribution of the density of the first conductivity type impurities, making it possible to implant ions so that the implantation of the first conductivity type impurity ions does not influence the adjacent cells. |
