| 摘要 |
PURPOSE:To prevent dust and impurities from sticking on a substrate to be processed and to make the substrate processible cleanly and with good effi ciency, by performing an etching process and an ashing process in succession so that the substrate to be processed is not exposed to the air. CONSTITUTION:A flow of an etching gas supplied from an etching gas supply source 26 is regulated in a gas flow regulator 25 and sent to a plasma generator 27. Then the etching gas made plasmatic is supplied to a semiconductor wafer 12 inside a processing room 11 and provided with an etching process. A heater 15 inside a mounting stand 13 is controlled by a temperature controlling device 14, so that a temperature of the mounting stand 13 is raised to heat the wafer 12. A switching operation of a gas flow path switching valve 21 is performed to send an ozone-contained oxygen gas, which is supplied from an oxygen supply source 23, to an ozone generator 24. The ozone-contained gas is made to pass through pores of a diffusion plate 19c and to flow out toward the wafer 12. The substrate is thus made processible cleanly and with good efficiency.
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