| 摘要 |
PURPOSE:To enable the exact control of impurity concentration of doping to an object to be processed, by measuring a high-frequency current during discharge in a plasma doping method using high-frequency discharge. CONSTITUTION:An object 4 to be processed is arranged in a vacuum chamber 1. Gas containing impurity is introduced from a gas introducing inlet 5, and a discharge is generated in the vacuum chamber 1 by a high frequency generator 8 of 13.56MHz. A high-frequency during the discharge is measured with an ammeter 9 via a high-frequency transformer 7. In this manner, the concentration of impurities into an object to be processed during the high-frequency discharge can be accurately measured by observing the value of high-frequency current proportional to the impurity concentration.
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