SELECTING METHOD FOR CELL IN SEMICONDUCTOR NONVOLATILE MEMORY ARRAY

摘要

PURPOSE:To prevent mis-write by increasing a potential of a selection gate electrode of a non-selection cell with no charge injected thereto at the program higher than the potential of a selection gate electrode of the selection cell to which an electric charge is injected thereby using a potential difference so as to select the cell. CONSTITUTION:The selection gate electrode voltage of a non-selection cell with no electron injected thereto at program is increased more than selection gate voltage of the selection cell so as to decrease the potential difference between the selection gate electrode of the non-selection cell and the floating gate electrode. Thus, the electric field fed between the selection gate electrode and the floating gate electrode is decreased. Thus, the injection of electrons through tunneling from the selection gate electrode to the floating gate electrode is prevented.