发明名称 INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve the integration degree by a method wherein an arrangement area of the integrated circuit on a substrate is provided with a shape smaller than the field size circle of a reduction projection exposure device and larger than the rectangle inscribed in this circle. CONSTITUTION:While the region 12 inscribed in a field size circle 11 has been used as a integrated circuit area, the region is further a region 13 shown with solid and slanting lines 13 is added to expand the region. Then, the substrate region 20 is made a square circumscribed with the circle in the field size region, and the integrated circuit region is made about the same size as the field size circle. Thus, it is made possible to improve the integration degree of an integrated circuit device with a currently used exposure device.
申请公布号 JPS63299121(A) 申请公布日期 1988.12.06
申请号 JP19870131231 申请日期 1987.05.29
申请人 HITACHI LTD 发明人 MUKAI KIICHIRO
分类号 H01L21/30;G03F7/20;H01L21/027 主分类号 H01L21/30
代理机构 代理人
主权项
地址